Translator Disclaimer
20 May 2011 IR CMOS: ultrafast laser-enhanced silicon detection
Author Affiliations +
SiOnyx has developed a novel silicon processing technology for CMOS sensors that will extend spectral sensitivity into the near/shortwave infrared (NIR/SWIR) and enable a full performance digital night vision capability comparable to that of current image-intensifier based night vision goggles. The process is compatible with established CMOS manufacturing infrastructure and has the promise of much lower cost than competing approaches. The measured thin layer quantum efficiency is as much as 10x that of incumbent imaging sensors with spectral sensitivity from 400 to 1200 nm.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. U. Pralle, J. E. Carey, H. Homayoon, J. Sickler, X. Li, J. Jiang, D. Miller, C. Palsule, and J. McKee "IR CMOS: ultrafast laser-enhanced silicon detection", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 801222 (20 May 2011);


IR CMOS: infrared enhanced silicon imaging
Proceedings of SPIE (June 10 2013)
Design of image sensors for hyperspectral applications
Proceedings of SPIE (September 22 2009)
Hybrid CMOS focal plane array with extended UV and NIR...
Proceedings of SPIE (January 11 2004)
Lux transfer: CMOS versus CCD
Proceedings of SPIE (April 23 2002)

Back to Top