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20 May 2011 Latest detector developments with HgCdTe grown by MOVPE on GaAs substrates
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Abstract
This paper describes the current state of the art HgCdTe grown by metal-organic vapour phase epitaxy on GaAs substrates, and progress in the development of dual-band (MW / LW) infrared detectors. We have described full-TV dual-band arrays of 640 x 512 pixels on 24μm and 20μm pitches. The latest development is a 20μm pitch 860 x 480 pixel array in 'widescreen' 16:9 format incorporating a new Read-Out Integrated Circuit (ROIC) designed in 0.35μm CMOS. The detector can be operated in multiple imaging modes: dedicated LW or MW, or both LW and MW wavebands per frame. The ROIC includes stable on-chip voltage references and a serial digital control interface. It supports integrate-then-read, integrate-while-read, binning and windowing readout modes. A proximity electronics board has been developed and is now offered to allow a range of detectors to be operated easily. Detector operation at higher operating temperatures has been demonstrated with a Hawk detector producing very high quality imagery up to 160K and useful imagery up to 175K.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Abbott, P. M Thorne, and C. P. Arthurs "Latest detector developments with HgCdTe grown by MOVPE on GaAs substrates", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 801236 (20 May 2011); https://doi.org/10.1117/12.885185
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