21 May 2011 Infrared dual-band detectors for next generation
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Proceedings Volume 8012, Infrared Technology and Applications XXXVII; 801238 (2011); doi: 10.1117/12.885583
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States
Abstract
The development of DB (Dual-Band) infrared detectors has been the core of research and technological improvements for the last ten years at CEA-LETI and Sofradir: the semi planar structure uses a proven standard process with robust reproducibility, leading to low-risk and a facilitated ramp-up to production. This makes it the natural choice for the third generation detectors proposed by Sofradir. The fabrication of DB MCT detectors is reaching maturity: ALTAIR with 24μm-pixel pitch arrays in TV format are available, showing median NETD around 18mK with operability over 99.5%. A second structure, based on two back to back diodes, with a single contact per pixel translates the DB pixel into smaller cell therefore being more efficient in terms of pitch reduction. These new technologies widen perspectives and open new horizons of applications such as large DB FPA, dual mode capability providing both SAL (Semi Active Laser) and IR operations for more robust target engagement or compact dual color detection with wide-angle integrated optics for missile warning system.
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Yann Reibel, Fabien Chabuel, Cedric Vaz, David Billon-Lanfrey, Jacques Baylet, Olivier Gravrand, Philippe Ballet, Gérard Destefanis, "Infrared dual-band detectors for next generation", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 801238 (21 May 2011); doi: 10.1117/12.885583; https://doi.org/10.1117/12.885583
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KEYWORDS
Sensors

Staring arrays

Missiles

Standards development

Infrared detectors

Mid-IR

Diodes

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