Different approximation for carrier statistic in non-parabolic MWIR HgCdTe photovoltaic devices

Jun Wang; Xiaoshuang Chen; Weida Hu; Lin Wang; Yongguo Chen; Wei Lu; Faqiang Xu

doi:10.1117/12.886656

20 May 2011 Different approximation for carrier statistic in non-parabolic MWIR HgCdTe photovoltaic devices

Jun Wang, Xiaoshuang Chen, Weida Hu, Lin Wang, Yongguo Chen, Wei Lu, Faqiang Xu

Proceedings Volume 8012, Infrared Technology and Applications XXXVII; 80123B (2011) https://doi.org/10.1117/12.886656
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

The current-voltage and photo-response characteristics of middle wavelength infrared (MWIR) HgCdTe photodiodes have been performed based on a self-consistent solution of the Poisson's equation, the electron/hole continuity equations, and three generation-recombination processes as Auger, Shockley-Read-Hall and optical generation recombination. Three different carrier density approximations, (1) parabolic conduction band approximation, (2) Bebb's non-parabolic expression, and (3) Harman's non-parabolic approximation, are proposed to simulate the I-V curve and photo-response of MWIR HgCdTe photovoltaic devices by considering the carrier degeneracy and the non-parabolic conduction band. It is found that omitting non-parabolic effect can lead to an enormous deviation in the simulation result, especially for heavily doped HgCdTe devices. Based on the calculated results of photo-response, the parabolic conduction band and Harman's non-parabolic approximation can lead to the response peak shift to short and long wavelength, respectively.

Citation Download Citation

Jun Wang, Xiaoshuang Chen, Weida Hu, Lin Wang, Yongguo Chen, Wei Lu, and Faqiang Xu "Different approximation for carrier statistic in non-parabolic MWIR HgCdTe photovoltaic devices", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80123B (20 May 2011); https://doi.org/10.1117/12.886656

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