Study of photosensitive area extension in HgCdTe photodiodes using scanning laser microscopy

Yongguo Chen; Weida Hu; Xiaoshuang Chen; Jun Wang; Wei Lu

doi:10.1117/12.886663

20 May 2011 Study of photosensitive area extension in HgCdTe photodiodes using scanning laser microscopy

Yongguo Chen, Weida Hu, Xiaoshuang Chen, Jun Wang, Wei Lu

Proceedings Volume 8012, Infrared Technology and Applications XXXVII; 80123C (2011) https://doi.org/10.1117/12.886663
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

This paper reports on the temperature-dependent extension of n-type inversion regions in HgCdTe photodiodes at low temperatures (87 K) compared to inversion regions at room temperature (300 K). Laser-beam-induced-current (LBIC) measurement techniques are used to obtain the photosensitive area extensions of n-type inversion in HgCdTe photodiodes for typical n+-on-p HgCdTe photovoltaic IR detectors. The effect of temperature on the extension of n-type conversion region is investigated by considering the sign of the LBIC signal. Theoretical results show that the hole concentration decreases in multi-doped HgCdTe as the temperature decreases. Consequently hole concentration is much lower than electron concentration at 87 K. It is demonstrated that the n-type inversion region extension is caused with the p-to-n type conversion.

Citation Download Citation

Yongguo Chen, Weida Hu, Xiaoshuang Chen, Jun Wang, and Wei Lu "Study of photosensitive area extension in HgCdTe photodiodes using scanning laser microscopy", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80123C (20 May 2011); https://doi.org/10.1117/12.886663

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