20 May 2011 Study of photosensitive area extension in HgCdTe photodiodes using scanning laser microscopy
Author Affiliations +
Abstract
This paper reports on the temperature-dependent extension of n-type inversion regions in HgCdTe photodiodes at low temperatures (87 K) compared to inversion regions at room temperature (300 K). Laser-beam-induced-current (LBIC) measurement techniques are used to obtain the photosensitive area extensions of n-type inversion in HgCdTe photodiodes for typical n+-on-p HgCdTe photovoltaic IR detectors. The effect of temperature on the extension of n-type conversion region is investigated by considering the sign of the LBIC signal. Theoretical results show that the hole concentration decreases in multi-doped HgCdTe as the temperature decreases. Consequently hole concentration is much lower than electron concentration at 87 K. It is demonstrated that the n-type inversion region extension is caused with the p-to-n type conversion.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yongguo Chen, Yongguo Chen, Weida Hu, Weida Hu, Xiaoshuang Chen, Xiaoshuang Chen, Jun Wang, Jun Wang, Wei Lu, Wei Lu, } "Study of photosensitive area extension in HgCdTe photodiodes using scanning laser microscopy", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80123C (20 May 2011); doi: 10.1117/12.886663; https://doi.org/10.1117/12.886663
PROCEEDINGS
6 PAGES


SHARE
Back to Top