3 June 2011 Tl-based wide gap semiconductor materials for x-ray and gamma ray detection
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Abstract
The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe2, Tl6I4Se, and Tl2Au4S3 for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl6I4Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under 57Co radiation, Tl6I4Se has a well-resolved spectral response and peak FWHM comparable to those of Cd0.9Zn0.1Te.
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Zhifu Liu, Zhifu Liu, J. A. Peters, J. A. Peters, C. Zang, C. Zang, Nam Ki Cho, Nam Ki Cho, Bruce W. Wessels, Bruce W. Wessels, Simon Johnsen, Simon Johnsen, Sebastian Peter, Sebastian Peter, John Androulakis, John Androulakis, Mercouri G. Kanatzidis, Mercouri G. Kanatzidis, Jung-Hwan Song, Jung-Hwan Song, Hosub Jin, Hosub Jin, Arthur J. Freeman, Arthur J. Freeman, } "Tl-based wide gap semiconductor materials for x-ray and gamma ray detection", Proc. SPIE 8018, Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII, 80180H (3 June 2011); doi: 10.1117/12.883230; https://doi.org/10.1117/12.883230
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