25 May 2011 Active layer design of THz GaN quantum cascade lasers
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Abstract
The structural, material and field dependence of the THz lasing frequency is reported for a QCL based upon GaN/AlGaN heterostructures. The inter-subband transition initiated generation of THz followed by the LO-phonon assisted fast depopulation takes into account the appropriate energy band alignments. Valence and conduction band alignments incorporating spin-orbit and crystal field splitting as well as bi-axial strain are used to determine the conduction band offset as a function of Al-mole fraction. Determination of eigen states takes into account the spontaneous and piezoelectric polarization induced modification in the conduction band profile. A lower THz generation frequency is predicted for Ga-face GaN/AlGaN-based QCLs using the revised energy band alignments.
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HungChi Chou, Tariq Manzur, Mehdi Anwar, "Active layer design of THz GaN quantum cascade lasers", Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 802309 (25 May 2011); doi: 10.1117/12.888007; https://doi.org/10.1117/12.888007
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