25 May 2011 Active layer design of THz GaN quantum cascade lasers
Author Affiliations +
The structural, material and field dependence of the THz lasing frequency is reported for a QCL based upon GaN/AlGaN heterostructures. The inter-subband transition initiated generation of THz followed by the LO-phonon assisted fast depopulation takes into account the appropriate energy band alignments. Valence and conduction band alignments incorporating spin-orbit and crystal field splitting as well as bi-axial strain are used to determine the conduction band offset as a function of Al-mole fraction. Determination of eigen states takes into account the spontaneous and piezoelectric polarization induced modification in the conduction band profile. A lower THz generation frequency is predicted for Ga-face GaN/AlGaN-based QCLs using the revised energy band alignments.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
HungChi Chou, HungChi Chou, Tariq Manzur, Tariq Manzur, Mehdi Anwar, Mehdi Anwar, } "Active layer design of THz GaN quantum cascade lasers", Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 802309 (25 May 2011); doi: 10.1117/12.888007; https://doi.org/10.1117/12.888007

Back to Top