Translator Disclaimer
25 May 2011 Active layer design of THz GaN quantum cascade lasers
Author Affiliations +
The structural, material and field dependence of the THz lasing frequency is reported for a QCL based upon GaN/AlGaN heterostructures. The inter-subband transition initiated generation of THz followed by the LO-phonon assisted fast depopulation takes into account the appropriate energy band alignments. Valence and conduction band alignments incorporating spin-orbit and crystal field splitting as well as bi-axial strain are used to determine the conduction band offset as a function of Al-mole fraction. Determination of eigen states takes into account the spontaneous and piezoelectric polarization induced modification in the conduction band profile. A lower THz generation frequency is predicted for Ga-face GaN/AlGaN-based QCLs using the revised energy band alignments.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
HungChi Chou, Tariq Manzur, and Mehdi Anwar "Active layer design of THz GaN quantum cascade lasers", Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 802309 (25 May 2011);

Back to Top