25 May 2011 Terahertz imaging with InP high-electron-mobility transistors
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Abstract
In this work, the performance of InP-based HEMTs as a THz detector was experimentally studied. The nature of the THz rectification by the two-dimensional plasmons in which the DC drain current variation ΔId becomes maximal around the threshold voltage was observed. Based on the imaging measurement, it was confirmed that our HEMTs device can work for sensitive THz imaging at 0.3 THz. The directivity of the detector was characterized with the maximum responsivity of 26.1 V/W at θ = 160 degrees.
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Takayuki Watanabe, Takayuki Watanabe, Keisuke Akagawa, Keisuke Akagawa, Yudai Tanimoto, Yudai Tanimoto, Dominique Coquillat, Dominique Coquillat, Wojciech Knap, Wojciech Knap, Taiichi Otsuji, Taiichi Otsuji, } "Terahertz imaging with InP high-electron-mobility transistors", Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 80230P (25 May 2011); doi: 10.1117/12.887952; https://doi.org/10.1117/12.887952
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