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25 May 2011 Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT
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Abstract
Tunable resonant absorption by plasmons in the two-dimensional electron gas (2DEG) of grating-gated HEMTs is known for a variety of semiconductor systems, giving promise of chip-scale frequency- agile THz imaging spectrometers. In this work, we present our approach to measurement of electrical response to millimeter waves from backward-wave oscillators (BWO) in the range 40-110 GHz for InP-based HEMTs. Frequency-modulation of the BWO with lock-in amplification of the source-drain current gives an output proportional to the change in absorption with frequency without contribution from non-resonant response. This is a first step in optimizing such devices for man-portable or space-based spectral-sensing applications.
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Nima Nader Esfahani, Christopher J. Fredricksen, Gautam Medhi, R. E. Peale, Justin W. Cleary, Walter R. Buchwald, Himanshu Saxena, and Oliver J. Edwards "Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT", Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 80230R (25 May 2011); https://doi.org/10.1117/12.884005
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