13 May 2011 Tip-based patterning of HOPG and CVD graphene
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Abstract
Nanometer-scale patterning of graphite and graphene has been accomplished through local anodic oxidation using an AFM tip. The underlying mechanism is explained. To date, protrusions, holes, trenches, and even words have been patterned in HOPG over scales ranging from 1nm2 to 1mm2 and depths ranging from sub nm to as deep as 200nm with less than 5 nm variation on the feature size and placement. This same method has also been applied to CVD-grown graphene providing a resist-free process for patterning graphene at the single nanometer scale. This capability could provide a method to rival e-beam lithography resolution but without any pre- or post-processing.
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Bryan T. Hicks, Bryan T. Hicks, Norimasa Yoshimizu, Norimasa Yoshimizu, Christopher O' Connell, Christopher O' Connell, Amit Lal, Amit Lal, Clifford R. Pollock, Clifford R. Pollock, } "Tip-based patterning of HOPG and CVD graphene", Proc. SPIE 8031, Micro- and Nanotechnology Sensors, Systems, and Applications III, 803104 (13 May 2011); doi: 10.1117/12.883277; https://doi.org/10.1117/12.883277
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