13 May 2011 Silicon and nitride FETs for THz sensing
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Abstract
Traditional THz electronics is using nonlinear properties of Schottky diodes for THz detectors and mixers and Gunn diodes driving frequency multiplier Schottky diode chains. Recently, ultra-short channel silicon CMOS and nitridebased transistors have demonstrated THz performance. New approaches use excitations of electron density in FET channels - called plasma waves - to generate and detect THz radiation, and extremely high sheet electron density in short channel AlN/GaN based HEMTs makes them especially suitable for applications in THz plasmonic devices.
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M. Shur, "Silicon and nitride FETs for THz sensing", Proc. SPIE 8031, Micro- and Nanotechnology Sensors, Systems, and Applications III, 80310J (13 May 2011); doi: 10.1117/12.883309; https://doi.org/10.1117/12.883309
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