Traditional THz electronics is using nonlinear properties of Schottky diodes for THz detectors and mixers and Gunn
diodes driving frequency multiplier Schottky diode chains. Recently, ultra-short channel silicon CMOS and nitridebased
transistors have demonstrated THz performance. New approaches use excitations of electron density in FET
channels - called plasma waves - to generate and detect THz radiation, and extremely high sheet electron density in
short channel AlN/GaN based HEMTs makes them especially suitable for applications in THz plasmonic devices.
"Silicon and nitride FETs for THz sensing", Proc. SPIE 8031, Micro- and Nanotechnology Sensors, Systems, and Applications III, 80310J (13 May 2011); doi: 10.1117/12.883309; https://doi.org/10.1117/12.883309