13 May 2011 Effect of energetic electron irradiation on graphene and graphene field-effect transistors
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We present a study of the effects of electron-beam irradiation on the Raman spectra and electronic transport properties of graphene and the operation of graphene field-effect transistors (GFET). Exposure to a 30 keV electronbeam causes negative shifts in the charge-neutral point (CNP) of the GFET, interpreted as due to n-doping in the graphene from the interaction of the energetic electron beam with the substrate. The electron beam is seen to also decrease the carrier mobilities and minimum conductivity of the graphene, as well as increase the intensity of the Raman D peak, all of which indicate defects generated in the graphene. We also study the relaxation of electronic properties after irradiation. The findings are valuable for understanding the effects of radiation damage on graphene and for the development of radiation-hard graphene-based electronics.
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Isaac Childres, Michael Foxe, Igor Jovanovic, Yong P. Chen, "Effect of energetic electron irradiation on graphene and graphene field-effect transistors", Proc. SPIE 8031, Micro- and Nanotechnology Sensors, Systems, and Applications III, 803122 (13 May 2011); doi: 10.1117/12.884694; https://doi.org/10.1117/12.884694

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