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12 May 2011 MBE back-illuminated silicon Geiger-mode avalanche photodiodes for enhanced ultraviolet response
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Abstract
We have demonstrated a wafer-scale back-illumination process for silicon Geiger-mode avalanche photodiode arrays using Molecular Beam Epitaxy (MBE) for backside passivation. Critical to this fabrication process is support of the thin (< 10 μm) detector during the MBE growth by oxide-bonding to a full-thickness silicon wafer. This back-illumination process makes it possible to build low-dark-count-rate single-photon detectors with high quantum efficiency extending to deep ultraviolet wavelengths. This paper reviews our process for fabricating MBE back-illuminated silicon Geigermode avalanche photodiode arrays and presents characterization of initial test devices.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel R. Schuette, Richard C. Westhoff, Joseph S. Ciampi, Gayatri E. Perlin, Douglas J. Young, Brian F. Aull, Robert K. Reich, and David C. Shaver "MBE back-illuminated silicon Geiger-mode avalanche photodiodes for enhanced ultraviolet response", Proc. SPIE 8033, Advanced Photon Counting Techniques V, 80330D (12 May 2011); https://doi.org/10.1117/12.887736
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