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16 May 2011 Resonant cavity enhancement of polycrystalline PbTe films for IR detectors on Si-ROICs
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Abstract
In this paper, we demonstrate high optical quantum efficiency (90%) resonant-cavity-enhanced mid-infrared photodetectors fabricated monolithically on a silicon platform. High quality photoconductive polycrystalline PbTe film is thermally evaporated, oxygen-sensitized at room temperature and acts as the infrared absorber. The cavity-enhanced detector operates in the critical coupling regime and shows a peak responsivity of 100 V/W at the resonant wavelength of 3.5 μm, 13.4 times higher compared to blanket PbTe film of the same thickness. Detectivity as high as 0.72 × 109cmHz1/2W1 has been measured, comparable with commercial polycrystalline mid-infrared photodetectors. As low temperature processing (< 160 °C) is implemented in the entire fabrication process, our detector is promising for monolithic integration with Si readout integrated circuits.
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Jianfei Wang, Timothy Zens, Juejun Hu, Piotr Becla, Anuradha M. Agarwal, and Lionel C. Kimerling "Resonant cavity enhancement of polycrystalline PbTe films for IR detectors on Si-ROICs", Proc. SPIE 8034, Photonic Microdevices/Microstructures for Sensing III, 80340K (16 May 2011); https://doi.org/10.1117/12.884081
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