Paper
5 May 2011 New method for selectivity enhancement of SiC field effect gas sensors for quantification of NOx
Christian Bur, Peter Reimann, Mike Andersson, Anita Lloyd Spetz, Andreas Schütze
Author Affiliations +
Proceedings Volume 8066, Smart Sensors, Actuators, and MEMS V; 80660I (2011) https://doi.org/10.1117/12.886431
Event: SPIE Microtechnologies, 2011, Prague, Czech Republic
Abstract
A Silicon Carbide based enhancement type field effect transistor with porous films of Iridium and Platinum as gate metallization has been investigated as a total NOx sensor operated in a temperature cycling mode. This operating mode is quite new for gas sensors based on the field effect but promising results have been reported earlier. Based on static investigations we have developed a suitable T-cycle for NOx detection in a mixture of typical exhaust gases (CO, C2H4, and NH3). Significant features describing the shape of the sensor response have been extracted allowing determination of NOx concentrations in gas mixtures. Multivariate statistics (e.g. Linear Discriminant Analysis) have been used to evaluate the multidimensional data. With this kind of advanced signal processing the influence of sensor drift and cross sensitivity to ambient gases can effectively be reduced. Thereby, we were able to detect NOx and furthermore determine different concentrations of NOx even in mixtures with typical exhaust gases. It can be concluded that the performance of field effect gas sensors for NOx determination can be enhanced considerably.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christian Bur, Peter Reimann, Mike Andersson, Anita Lloyd Spetz, and Andreas Schütze "New method for selectivity enhancement of SiC field effect gas sensors for quantification of NOx", Proc. SPIE 8066, Smart Sensors, Actuators, and MEMS V, 80660I (5 May 2011); https://doi.org/10.1117/12.886431
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Cited by 3 scholarly publications.
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KEYWORDS
Sensors

Nitrous oxide

Carbon monoxide

Gases

Field effect transistors

Iridium

Platinum

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