5 May 2011 New method for selectivity enhancement of SiC field effect gas sensors for quantification of NOx
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Abstract
A Silicon Carbide based enhancement type field effect transistor with porous films of Iridium and Platinum as gate metallization has been investigated as a total NOx sensor operated in a temperature cycling mode. This operating mode is quite new for gas sensors based on the field effect but promising results have been reported earlier. Based on static investigations we have developed a suitable T-cycle for NOx detection in a mixture of typical exhaust gases (CO, C2H4, and NH3). Significant features describing the shape of the sensor response have been extracted allowing determination of NOx concentrations in gas mixtures. Multivariate statistics (e.g. Linear Discriminant Analysis) have been used to evaluate the multidimensional data. With this kind of advanced signal processing the influence of sensor drift and cross sensitivity to ambient gases can effectively be reduced. Thereby, we were able to detect NOx and furthermore determine different concentrations of NOx even in mixtures with typical exhaust gases. It can be concluded that the performance of field effect gas sensors for NOx determination can be enhanced considerably.
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Christian Bur, Christian Bur, Peter Reimann, Peter Reimann, Mike Andersson, Mike Andersson, Anita Lloyd Spetz, Anita Lloyd Spetz, Andreas Schütze, Andreas Schütze, } "New method for selectivity enhancement of SiC field effect gas sensors for quantification of NOx", Proc. SPIE 8066, Smart Sensors, Actuators, and MEMS V, 80660I (5 May 2011); doi: 10.1117/12.886431; https://doi.org/10.1117/12.886431
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