Development of capacitive RF MEMS switches with TaN and Ta2O5 thin films

Anna Persano; Fabio Quaranta; Adriano Cola; Giorgio De Angelis; Romolo Marcelli; Pietro Siciliano

doi:10.1117/12.886715

5 May 2011 Development of capacitive RF MEMS switches with TaN and Ta₂O₅ thin films

Anna Persano, Fabio Quaranta, Adriano Cola, Giorgio De Angelis, Romolo Marcelli, Pietro Siciliano

Proceedings Volume 8066, Smart Sensors, Actuators, and MEMS V; 80660V (2011) https://doi.org/10.1117/12.886715
Event: SPIE Microtechnologies, 2011, Prague, Czech Republic

Abstract

We develop shunt capacitive RF MEMS switches in III-V technology making use of materials which can be alternative to the ones commonly used, in order to overcome some technological constraints concerning the RF MEMS reliability. Specifically, we evaluate the potential of tantalum nitride (TaN) and tantalum pentoxide (Ta₂O₅) to be used for the switches actuation pads and dielectric layers, respectively. To this scope, a compositional, structural and electrical characterization of TaN and Ta₂O₅ films as a function of the deposition parameters, such as the substrate temperature and the sputtering mixture composition, is performed. The realized switches show good actuation voltages, in the range 15- 20 V, an insertion loss better than -0.8 dB up to 30 GHz, and an isolation of ~ -40 dB at the resonant frequency. A comparison between the measured S-parameter values and the results of a circuit simulation is also presented and discussed, providing useful information on the operation of the fabricated switches.

Citation Download Citation

Anna Persano, Fabio Quaranta, Adriano Cola, Giorgio De Angelis, Romolo Marcelli, and Pietro Siciliano "Development of capacitive RF MEMS switches with TaN and Ta₂O₅ thin films", Proc. SPIE 8066, Smart Sensors, Actuators, and MEMS V, 80660V (5 May 2011); https://doi.org/10.1117/12.886715

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