Comparison among performance of strain sensors based on different semiconductor thin films

Mariana A. Fraga; Humber Furlan; Rodrigo S. Pessoa

doi:10.1117/12.886624

5 May 2011 Comparison among performance of strain sensors based on different semiconductor thin films

Mariana A. Fraga, Humber Furlan, Rodrigo S. Pessoa

Proceedings Volume 8066, Smart Sensors, Actuators, and MEMS V; 80662G (2011) https://doi.org/10.1117/12.886624
Event: SPIE Microtechnologies, 2011, Prague, Czech Republic

Abstract

In recent years, the piezoresistive properties of different semiconductor thin films, with chemical and mechanical stability, have been studied in order to use them as base material in the fabrication of strain sensors for high temperature applications. In this context, this work compares the performance of strain sensors based on sputter-deposited semiconductor thin films such as titanium dioxide (TiO₂), silicon carbide (SiC) and diamond-like carbon (DLC) operated at temperatures up to 250°C. The structure of each sensor consists of four thin-film resistors, configured in Wheatstone bridge, with Ti/Au electrical contacts. These strain sensors reported here differ from our previous works in the types of materials used and in the quantity/configuration of the thin-film resistors. The strain sensors were fabricated by photolithography techiques in conjunction with lift-off processes. The beam-bending experiments were performed to characterize the sensors.

Citation Download Citation

Mariana A. Fraga, Humber Furlan, and Rodrigo S. Pessoa "Comparison among performance of strain sensors based on different semiconductor thin films", Proc. SPIE 8066, Smart Sensors, Actuators, and MEMS V, 80662G (5 May 2011); https://doi.org/10.1117/12.886624

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