3 May 2011 Evaluation of MOBILE-based gate-level pipelining augmenting CMOS with RTDs
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The incorporation of Resonant Tunnel Diodes (RTDs) into III/V transistor technologies has shown an improved circuit performance: higher circuit speed, reduced component count, and/or lowered power consumption. Currently, the incorporation of these devices into CMOS technologies (RTD-CMOS) is an area of active research. Although some works have focused the evaluation of the advantages of this incorporation, additional work in this direction is required. We compare RTD-CMOS and pure CMOS realizations of a network of logic gates which can be operated in a gate-level pipeline. Significant lower average power is obtained for RTD-CMOS implementations.
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Juan Nuñez, María J. Avedillo, José M. Quintana, "Evaluation of MOBILE-based gate-level pipelining augmenting CMOS with RTDs", Proc. SPIE 8067, VLSI Circuits and Systems V, 80670Z (3 May 2011); doi: 10.1117/12.886816; https://doi.org/10.1117/12.886816


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