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4 May 2011 EUV detectors based on AlGaN-on-Si Schottky photodiodes
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Photodetectors designed for the Extreme Ultraviolet (EUV) range with the Aluminum Gallium Nitride (AlGaN) active layer are reported. AlGaN layers were grown by Molecular Beam Epitaxy (MBE) on Si(111) wafers. Different device structures were designed and fabricated, including single pixel detectors and 2D detector arrays. Sensitivity in different configurations was demonstrated, including front- and backside illumination. The latter was possible after integration of the detector chips with dedicated Si-based readouts using high-density In bump arrays and flip-chip bonding. In order to avoid radiation absorption in silicon, the substrate was removed, leaving a submicron-thin membrane of AlGaN active layer suspended on top of an array of In bumps. Optoelectrical characterization was performed using different UV light sources, also in the synchrotron beamlines providing radiation down to the EUV range. The measured cut-off wavelength of the active layer used was 280 nm, with a rejection ratio of the visible radiation above 3 orders of magnitude. Spectral responsivity and quantum efficiency values
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. E. Malinowski, J.-Y. Duboz, P. De Moor, K. Minoglou, J. John, P. Srivastava, F. Semond, E. Frayssinet, A. BenMoussa, B. Giordanengo, C. Van Hoof, and R. Mertens "EUV detectors based on AlGaN-on-Si Schottky photodiodes", Proc. SPIE 8073, Optical Sensors 2011; and Photonic Crystal Fibers V, 807302 (4 May 2011);

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