11 May 2011 Amorphous As-S-Se semiconductor thin films for holography and lithography
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Abstract
Electron beam (EB) induced changes in thin films of the amorphous chalcogenide semiconductors As-S-Se have been studied. The experimental results on patterning of As-S-Se film surfaces by EB exposure and following chemical etching are presented. The possibilities of practical application of this material as resists for the production of relief holograms and diffractive optical elements (DOE) are discussed.
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Vadims Kolbjonoks, Vadims Kolbjonoks, Vjaceslavs Gerbreders, Vjaceslavs Gerbreders, Janis Teteris, Janis Teteris, Andrejs Bulanovs, Andrejs Bulanovs, } "Amorphous As-S-Se semiconductor thin films for holography and lithography", Proc. SPIE 8074, Holography: Advances and Modern Trends II, 80740U (11 May 2011); doi: 10.1117/12.886837; https://doi.org/10.1117/12.886837
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