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22 April 2011 EB resolution capability with CP exposure
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Proceedings Volume 8081, Photomask and Next-Generation Lithography Mask Technology XVIII; 80810A (2011)
Event: Photomask and NGL Mask Technology XVIII, 2011, Yokohama, Japan
We are evaluating the resolution capability of character projection (CP) exposure method using a Multi Colum Cell Proof of Concept (MCC-POC) tool. Resolving of 14nm half pitch (HP) 1:1 line and space (LS) patterns are confirmed with fine openings of a DNP fabricated CP mask for 10:1 de-magnification ratio. CP exposure has been proven to exhibit high resolution capabilities even under the most challenging optimization conditions that are required for throughput enhancement. As a result of evaluating the resolution capability of CP technology, it became apparent that the CP technology has strong potentials to meet future challenges in two areas. One is where an increased number of CP with variable illumination technology gives a higher throughput which has been the main objective behind the development of this technology, and the other is to achieve higher resolution capability that is one of the strengths of CP exposure method. We also evaluated the resolution on Quartz mask blanks instead of Si wafers and obtained 18nm HP 1:1 resolution with CP exposure.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masaki Kurokawa, Hideaki Isobe, Kenji Abe, Yoshihisa Oae, Akio Yamada, Shogo Narukawa, Mikio Ishikawa, Hiroshi Fujita, Morihisa Hoga, and Naoya Hayashi "EB resolution capability with CP exposure", Proc. SPIE 8081, Photomask and Next-Generation Lithography Mask Technology XVIII, 80810A (22 April 2011);


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