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19 May 2011 193-nm radiation durability study of MoSi binary mask and resulting lithographic performance
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Proceedings Volume 8081, Photomask and Next-Generation Lithography Mask Technology XVIII; 80810X (2011)
Event: Photomask and NGL Mask Technology XVIII, 2011, Yokohama, Japan
Dimensions on mask continue to shrink to keep up with the ITRS roadmap. This has implications on the material of choice for the blanks. For example, the new binary OMOG stack (Opaque MOSi on Glass) was successfully introduced to meet the mask specifications at the 32nm technology node. Obviously 193-nm optical lithography will be further used in production at even higher NA and lower k1 emphasizing, for example, the impact on wafer of any electromagnetic field migration effects. Indeed, long term radiation damage inducing CD growth and consequently, device yield loss, has already been reported [1, 2]. This mechanism, known as Electric Field induced Migration of chrome (EMF) often shortens the mask's lifetime. Here, a study was conducted to investigate the impact of intensive ArF scanner exposure both on final wafer and mask performances. The Si printed wafers measured with top-down CD-SEM were characterized with respect to CD uniformity, linearity, Sub Resolution Assist Feature (SRAF) printability through process window, MEEF, DOF, and OPC accuracy. The data was also correlated to advanced mask inspection results (e.g. AIMSTM) taken at the same location. More precisely, this work follows a preliminary study [1] which pointed out that OMOG is less sensitive to radiation than standard COG (Chrome On Glass). And, in this paper, we report on results obtained at higher energy to determine the ultimate lifetime of OMOG masks.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Isabelle Servin, Jérôme Belledent, Laurent Pain, Brid Connolly, Martin Sczyrba, and Matt Lamantia "193-nm radiation durability study of MoSi binary mask and resulting lithographic performance", Proc. SPIE 8081, Photomask and Next-Generation Lithography Mask Technology XVIII, 80810X (19 May 2011);

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