Dimensions on mask continue to shrink to keep up with the ITRS roadmap. This has implications on the material of
choice for the blanks. For example, the new binary OMOG stack (Opaque MOSi on Glass) was successfully introduced
to meet the mask specifications at the 32nm technology node. Obviously 193-nm optical lithography will be further used
in production at even higher NA and lower k1 emphasizing, for example, the impact on wafer of any electromagnetic
field migration effects. Indeed, long term radiation damage inducing CD growth and consequently, device yield loss, has
already been reported [1, 2]. This mechanism, known as Electric Field induced Migration of chrome (EMF) often
shortens the mask's lifetime.
Here, a study was conducted to investigate the impact of intensive ArF scanner exposure both on final wafer and mask
performances. The Si printed wafers measured with top-down CD-SEM were characterized with respect to CD
uniformity, linearity, Sub Resolution Assist Feature (SRAF) printability through process window, MEEF, DOF, and
OPC accuracy. The data was also correlated to advanced mask inspection results (e.g. AIMSTM) taken at the same
location. More precisely, this work follows a preliminary study  which pointed out that OMOG is less sensitive to
radiation than standard COG (Chrome On Glass). And, in this paper, we report on results obtained at higher energy to
determine the ultimate lifetime of OMOG masks.