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15 September 2011 Optical spin injection in SiGe heterostructures
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We present photoluminescence (PL) and spin polarized photo-emission (SPPE) measurements performed on bulk Ge, and Ge/Si(100) epilayers. A set of bi-axially strained Ge epilayers featuring different strain levels has been deposited by low energy plasma enhanced CVD (LEPECVD) and characterized by high resolution X-ray diffraction (HR-XRD). SPPE data indicate that compressive strain effectively lifts the heavy holes - light holes degeneracy raising the polarization of injected electrons above the P=50% limit of bulk material. Circularly polarized light PL measurements performed on p-type bulk crystals confirm the suitability of Ge for spintronics application showing a robust electron spin inizialization at the direct gap of Ge and giving a lower bound value for the spin relaxation time of ≈ 230 fs.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Giovanni Isella, Federico Bottegoni, Fabio Pezzoli, Stefano Cecchi, Eleonora Gatti, Daniel Chrastina, Emanuele Grilli, Mario Guzzi, and Franco Ciccacci "Optical spin injection in SiGe heterostructures", Proc. SPIE 8100, Spintronics IV, 810007 (15 September 2011);


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