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15 September 2011 Inelastic light scattering of hole spin excitations in p-modulation-doped GaAs-AlGaAs single quantum wells
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Abstract
We have investigated spin-density excitations of holes in one-sided p-modulation-doped GaAs-AlGaAs single quantum wells by means of resonant inelastic light scattering. The experiments yield a direct measure of the Rashba spin splitting of holes in quantum wells with an asymmetric potential profile. In the low-energy range of the inelastic light scattering spectra, we observe in all samples well-defined excitations with energies between about 1 meV and 4 meV, which can be attributed to spin-density excitations of the two-dimensional hole systems due to polarization selection rules. We interpret the excitations as spin-density excitations, where holes are excited between the Rashba spin-split ground states, performing a spinflip process. Comparison to k · p bandstructure calculations shows good agreement of the measured and calculated wave-vector-dependent spin splittings. Details of the spectra show a distinct dependence on the directions of light polarizations with respect to crystallographic axes. In particular, we have detected a doublet structure of the hole spin excitations, which might be attributed to the anisotropic spin-split hole dispersion within the quantum-well plane.
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Michael Hirmer, Marika Hirmer, Tobias Korn, Dieter Schuh, Werner Wegscheider, Roland Winkler, and Christian Schüller "Inelastic light scattering of hole spin excitations in p-modulation-doped GaAs-AlGaAs single quantum wells", Proc. SPIE 8100, Spintronics IV, 81000N (15 September 2011); https://doi.org/10.1117/12.892445
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