15 September 2011 Simulation of spin MOSFETs
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The development of spin MOSFETs has been stymied by low values of magnetoresistance (MR) measured in experiments. Simulation studies have largely focused on diffusion driven or ballistic transport in the semiconductor and a simplistic treatment of spin injecting contacts. Here we demonstrate a novel framework to simulate spin injection and spin transport in semiconductors in the drift-diffusion regime and a tunneling based model for spin injecting contacts thereby enabling simulation and optimization of experimental devices.
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Arunanshu M. Roy, Arunanshu M. Roy, Dmitri E. Nikonov, Dmitri E. Nikonov, Krishna C. Saraswat, Krishna C. Saraswat, } "Simulation of spin MOSFETs", Proc. SPIE 8100, Spintronics IV, 81001J (15 September 2011); doi: 10.1117/12.893171; https://doi.org/10.1117/12.893171

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