15 September 2011 Simulation of spin MOSFETs
Author Affiliations +
Abstract
The development of spin MOSFETs has been stymied by low values of magnetoresistance (MR) measured in experiments. Simulation studies have largely focused on diffusion driven or ballistic transport in the semiconductor and a simplistic treatment of spin injecting contacts. Here we demonstrate a novel framework to simulate spin injection and spin transport in semiconductors in the drift-diffusion regime and a tunneling based model for spin injecting contacts thereby enabling simulation and optimization of experimental devices.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arunanshu M. Roy, Arunanshu M. Roy, Dmitri E. Nikonov, Dmitri E. Nikonov, Krishna C. Saraswat, Krishna C. Saraswat, } "Simulation of spin MOSFETs", Proc. SPIE 8100, Spintronics IV, 81001J (15 September 2011); doi: 10.1117/12.893171; https://doi.org/10.1117/12.893171
PROCEEDINGS
6 PAGES


SHARE
Back to Top