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19 September 2011 Computational study of negative differential resistance in graphene bilayer nanostructures
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Abstract
Although graphene has fascinating electronic properties, lack of a band-gap reduces its utility for conventional electronic device applications. A tunable bandgap can be induced in bilayer graphene by application of a potential difference between the two layers. The simplest geometry for creating such a potential difference consists of two overlapping single layer graphene nanoribbons. Numerical simulations, based on π-band nearest neighbor tight binding model and the nonequilibrium Green's function formalism, show that transmission through such a structure has a strong dependence on applied bias. The simulated current voltage characteristics mimic the characteristics of resonant tunneling diode featuring negative differential resistance. It is found that the bandgap of the nanoribbons and length of the bilayer region have significant effects on the current voltage characteristics. In particular, the peak to valley ratio decreases with increasing length of the bilayer region. And the cut-in voltage is strongly modulated by the bandgap of the GNRs.
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K. M. Masum Habib, Sonia Ahsan, and Roger K. Lake "Computational study of negative differential resistance in graphene bilayer nanostructures", Proc. SPIE 8101, Carbon Nanotubes, Graphene, and Associated Devices IV, 81010Q (19 September 2011); https://doi.org/10.1117/12.894252
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