23 September 2011 Carrier leakage in Ge/Si core-shell nanocrystals for lasers: core size and strain effects
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Proceedings Volume 8102, Nanoengineering: Fabrication, Properties, Optics, and Devices VIII; 81020P (2011); doi: 10.1117/12.894153
Event: SPIE NanoScience + Engineering, 2011, San Diego, California, United States
Abstract
The electronic structure and optical properties of Ge-core/Si-shell nanocrystal or quantum dot (QD) are investigated using the atomistic tight binding method as implemented in NEMO3D. The thermionic lifetime that governs the hole leakage mechanism in the Ge/Si QD based laser, as a function of the Ge core size and strain, is also calculated by capturing the bound and extended eigenstates, well below the band edges. We also analyzed the eect of core size and strain on optical properties such as transition energies and transition rates between electron and hole states. Finally, a quantitative and qualitative analysis of the leakage current due to the hole leakage through the Ge-core/Si-shell QD laser, at dierent temperatures and Ge core sizes, is presented.
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Mahesh R. Neupane, Rajib Rahman, Roger K. Lake, "Carrier leakage in Ge/Si core-shell nanocrystals for lasers: core size and strain effects", Proc. SPIE 8102, Nanoengineering: Fabrication, Properties, Optics, and Devices VIII, 81020P (23 September 2011); doi: 10.1117/12.894153; https://doi.org/10.1117/12.894153
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KEYWORDS
Germanium

Silicon

Transition metals

Optical properties

Nanocrystals

Quantum dots

Chemical species

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