Paper
20 September 2011 Sidewall slope sensitivity of CD-AFM
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Abstract
In this paper, we explore the sensitivity of three-dimensional atomic force microscopy to incremental variation in the sidewall angle of near-vertical features. Measurement results are presented from a specially constructed wafer with continuous variation in sidewall slope across a range of angles just above and below vertical. This sample was scanned with a variety of both tip shapes and sizes using two different scan modes. From the results, we are able to derive cutoff limits for measuring near-vertical angles using aggressive scanning modes and the relative biases of different modes and tips in measuring a range of sidewall angles. This provides information about the measurement limitations of differing instrument configurations, each configuration consisting of a combination of tip and scan mode and sensitivity demarcated in terms of the ability to detect changes in the slope and relative accuracy of the measurement.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aaron Cordes, Benjamin Bunday, and Eric Cottrell "Sidewall slope sensitivity of CD-AFM", Proc. SPIE 8105, Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors V, 810506 (20 September 2011); https://doi.org/10.1117/12.896344
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CITATIONS
Cited by 6 scholarly publications.
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KEYWORDS
Semiconducting wafers

Critical dimension metrology

Calibration

Atomic force microscopy

Metrology

Scanning electron microscopy

Photoresist materials

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