16 September 2011 Growth of ZnO-based nanorod heterostructures and their photonic device applications
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This proceeding summarizes the materials preparation of position-controlled ZnO-based nanorod heterostructures and fabrication of vertically-aligned wide band gap semiconductor nanorod light-emitting devices. Especially the fabrication of GaN/InxGa1-xN/GaN/ZnO nanorod heterostructured visible-light-emitter arrays on sapphire and Si substrates, representing important progress in the field of nanoheteroepitaxy and photonic devices in nanoscale, are reported. Particularly, position-controlled vertical nanostructure arrays make those possible to prepare high-quality material systems without stress or strain accumulation and to fabricate high-performance light-emitting devices (LEDs) with a three-dimensional device configuration. Our method based on nanoheteroepitaxy and position-controlled nanodevice integration for fabricating GaN-based micro-LED arrays constitutes a promising strategy for resolving the issues of conventional GaN LEDs and fabricating high-performance LEDs on various substrates for potential optoelectronic integrated circuits and solid-state lighting applications.
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Jinkyoung Yoo, Jinkyoung Yoo, S. Thomas Picraux, S. Thomas Picraux, Gyu-Chul Yi, Gyu-Chul Yi, } "Growth of ZnO-based nanorod heterostructures and their photonic device applications", Proc. SPIE 8106, Nanoepitaxy: Materials and Devices III, 81060N (16 September 2011); doi: 10.1117/12.896690; https://doi.org/10.1117/12.896690

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