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16 September 2011 Indium phosphide nanowires integrated directly on carbon fibers
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Abstract
We have demonstrated the growth of a group III-V semiconductor binary alloy, indium phosphide (InP), directly on carbon fibers thereby enabling a union of semiconductor and structural materials. Carbon fibers were prepared by electrospinning solutions of polyacrilonitrile (PAN) and dimethylformamide (DMF) followed by carbonization at 750 °C in inert atmosphere. Gold nanoparticles dispersed on the fibers catalyzed nanowire growth by metal organic chemical vapor deposition. X-ray diffraction suggests that the nanowires appear to be epitaxially grown along the (110) direction. Geometrical parameters have been determined by scanning electron microscopy and transmission electron microscopy and elemental analysis has been carried out using energy dispersive spectroscopy. The nanowires grown from carbon fibers are composed of an amorphous shell and crystalline core which alternates at high spatial frequency.mountai
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Andrew J. Lohn, Timothy Jay Longson, and Nobuhiko P. Kobayashi "Indium phosphide nanowires integrated directly on carbon fibers", Proc. SPIE 8106, Nanoepitaxy: Materials and Devices III, 81060X (16 September 2011); https://doi.org/10.1117/12.892493
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