Registration Accuracy And Critical Dimension Control For A 5X Reduction Stepper With Magnification Control

F. J. van Hout; M. A. van den Brink; S. Wittekoek

doi:10.1117/12.975604

17 September 1987 Registration Accuracy And Critical Dimension Control For A 5X Reduction Stepper With Magnification Control

F. J. van Hout, M. A. van den Brink, S. Wittekoek

Author Affiliations +

Proceedings Volume 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection; (1987) https://doi.org/10.1117/12.975604
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands

Abstract

Today, the resolution of state-of-the-art microlithography lenses is well within the submicron region. There are many indications that the historical drive to better resolution will continue at least for the coming years. In order to fully utilize this improved lens performance in wafer steppers the alignment overlay accuracy has to improve in a similar way, thus increasing total yield. As a rule-of-thumb in current IC design the overlay accuracy should not exceed approximately 20% of the lens resolution. Hence, the overlay accuracy of a wafer stepper capable of printing 0.7 pm features should be around 0.15 μm. At the same time, the requirements for illumination and focussing/levelling accuracy become tighter to enable effective use of these high aperture lenses. In addition, factory requirements for IC production equipment now stipulate completely automatic operation as well as 'clean' design to ensure that both wafers and reticles remain absolutely clean during the IC manufacturing process.

Citation Download Citation

F. J. van Hout, M. A. van den Brink, and S. Wittekoek "Registration Accuracy And Critical Dimension Control For A 5X Reduction Stepper With Magnification Control", Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); https://doi.org/10.1117/12.975604

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