Residues Formation And Surface Contamination In Submicronic Definition Multilayers Structures Obtained By Reactive Ion Etching

J. Etrillard

doi:10.1117/12.975600

17 September 1987 Residues Formation And Surface Contamination In Submicronic Definition Multilayers Structures Obtained By Reactive Ion Etching

J. Etrillard

Author Affiliations +

Proceedings Volume 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection; (1987) https://doi.org/10.1117/12.975600
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands

Abstract

A systematical study of the formation of residue and surface pollution has been made to permit the utilization of multilayers structures in optoelectronical III-V semi-conductor devices. To obtain a very high resolution, (30 nm line width) a precise characterization of the influence of parameters involved in reactive ion etching is necessary. In particular, it is important to avoid the residue formation which annihilate the intrinsic high definition possibilities of RIE applicated to organic materials. We show how this residue formation depend of plasma parameters. The evolution is noticeable with the pression of the etching gas. The shape and density are dependant on the nature of the organic material etched. The surface pollution is very dependant on the nature of the material which constituate the reactor but also depend of ion energy and duration of surface-plasma interface. We present the main problems issued from these surface residues and pollution in the following operations of etching or lift-off in a total process of fabrication. This process is now used in optoelectronic integration.

Citation Download Citation

J. Etrillard "Residues Formation And Surface Contamination In Submicronic Definition Multilayers Structures Obtained By Reactive Ion Etching", Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); https://doi.org/10.1117/12.975600

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