The Mechanism Of The Desire Process

B. Roland; R. Lombaerts; C. Jakus; F. Coopmans

doi:10.1117/12.975597

17 September 1987 The Mechanism Of The Desire Process

B. Roland, R. Lombaerts, C. Jakus, F. Coopmans

Proceedings Volume 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection; (1987) https://doi.org/10.1117/12.975597
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands

Abstract

Multilayer resist techniques have been studied for several years already. Especially with the trilayer systems very good results can be obtained, but only at the expense of added complexity. Their complexity has caused some reluctance to implement these techniques into IC manufacturing lines. Using the PLASMASK resist in the so called DESIRE process, even better performance can be obtained, without any of the disadvantages of multilayer techniques. The process is based on a silylation which results from the selective diffusion of a silylating agent into the resist matrix. The basic chemistry that enables this differentiation in diffusion is discussed, as well as the principle advantages of the diffusion-controlled process.

Citation Download Citation

B. Roland, R. Lombaerts, C. Jakus, and F. Coopmans "The Mechanism Of The Desire Process", Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); https://doi.org/10.1117/12.975597

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