21 September 2011 Low-cost fabrication of improved n-Si/p-AgGaSe2 heterojunction solar cells
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The fabrication of low-cost n-Si/p-AgGaSe2 heterojunction solar cells by controlled thermal evaporation method is reported. It is observed that in the case of p-AgGaSe2 films deposited on H-terminated n-Si (H-Si) substrates at higher temperature of 650K, the photovoltaic properties of the n-Si/p-AgGaSe2 junctions are considerably improved. The improved junction, under solar simulator AM1 illumination, demonstrated an efficiency of ~5.2% on an active area of 0.18 cm2 without any antireflection coating whereas the AgGaSe2 films thermally evaporated at room temperature of 300K on H-Si substrates showed the efficiency ~2.1%.
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Sandip Das, Sandip Das, Krishna C. Mandal, Krishna C. Mandal, } "Low-cost fabrication of improved n-Si/p-AgGaSe2 heterojunction solar cells", Proc. SPIE 8110, Thin Film Solar Technology III, 81100O (21 September 2011); doi: 10.1117/12.896891; https://doi.org/10.1117/12.896891

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