13 September 2011 Preparation and properties of CdS film used in CIGS-based solar cell with CBD method
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Abstract
Since CdS material has a direct and wide band-gap, it is very potential for fabricating photovoltaic devices. Due to its wide band-gap, CdS film can be acted as a window material to combine with Cu(In, Ga)Se2 film. To obtain a quite uniform, easily scaling-up, and inexpensive sample, the CdS thin film with a thickness of 50 nm was deposited by using chemical bath deposition (CBD) technique. Through varying annealing temperatures and holding times, the electrical and optical properties of CdS film could be obviously improved. By Hall measurements, the carrier concentration of CdS sample S8 annealed at 100°C with 20 min is the maximum and its surface resistivity is the minimum. Summarizing these measuring data, we find that the concentration and the mobility of sample S8 are 2.4×1021 cm-3 and 20.5 cm2/v-s, respectively, and it is very suitable for applying to Cu(In, Ga)Se2-based solar cell.
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Chung Ping Liu, Chung Ping Liu, Chuan Lung Chuang, Chuan Lung Chuang, Wei Han Wu, Wei Han Wu, Tsung Ju Hsieh, Tsung Ju Hsieh, Ming Wei Chang, Ming Wei Chang, } "Preparation and properties of CdS film used in CIGS-based solar cell with CBD method", Proc. SPIE 8110, Thin Film Solar Technology III, 811011 (13 September 2011); doi: 10.1117/12.893191; https://doi.org/10.1117/12.893191
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