Si/silicon nanowire/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) heterojunction solar cells

Hong-Jhang Syu; Shu-Chia Shiu; Ching-Fuh Lin

doi:10.1117/12.893353

20 September 2011 Si/silicon nanowire/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) heterojunction solar cells

Hong-Jhang Syu, Shu-Chia Shiu, Ching-Fuh Lin

Author Affiliations +

Proceedings Volume 8111, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II; 81110W (2011) https://doi.org/10.1117/12.893353
Event: SPIE Solar Energy + Technology, 2011, San Diego, California, United States

Abstract

Conventional manufacturing processes of solar cells, including epitaxy, diffusion, deposition and dry etching, are high cost and high power consumption. To save energy and reduce expenses, we use organic material, silicon nanostructure and solution process. The devices structure is n-type bulk Si (n-Si)/n-type silicon nanowires (n- SiNWs)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) heterostructure. The active region includes n-Si and n-SiNW arrays, promising the property of ultra low reflection for high light absorption. In this work, SiNWs of only a-few hundred nanometers could lower the reflectance to below 5%. In addition, an organic material - PEDOT:PSS, instead of p-type doping, is introduced to form a p-n junction with n-Si/n-SiNWs for separating the electron-hole pairs. The use of PEDOT:PSS can also passivate the surface defects of n-SiNWs. N-type SiNW arrays are made by aqueous etching process. The etchant contains Ag⁺ and HF etching vertically to the 1-10 Ω-cm Si (100) wafers. After etching and removing residual Ag and SiO₂ by nitric acid and diluted HF successively, n-SiNW arrays existed on either surfaces of n-Si with very dark color; then Ti and Ag were evaporated on n-Si to be a cathode. Finally, nanowires of n-Si/n-SiNWs were stuck on the PEDOT:PSS that were spin-coated on the ITO coated glass to form a core-sheath heterojunction. The performance and quantum efficiencies (QE) were measured. The short circuit current density and power conversion efficiency are 27.46 mA/cm² and 8.05%, respectively, which are higher than other solar cells containing SiNWs. The external and internal QE are beyond 50% and 60% in visible range, respectively.

Citation Download Citation

Hong-Jhang Syu, Shu-Chia Shiu, and Ching-Fuh Lin "Si/silicon nanowire/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) heterojunction solar cells", Proc. SPIE 8111, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion II, 81110W (20 September 2011); https://doi.org/10.1117/12.893353

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KEYWORDS

Silicon

Solar cells

Silver

Quantum efficiency

Reflectivity

Heterojunctions

Etching

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