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13 September 2011 Reverse bias test of c-Si single-cell PV modules
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As new methods to test degradation of c-Si single-cell PV modules, we carried out both reverse bias constant current (RBCC) test and IV duty cycle (IVDC) test under different loading levels, that is, input power to the cell. The common failure modes of field PV modules, such as finger electrodes discoloration, inflated back sheet, and burnt back sheet in the modules, were observed. It was found that cell's series resistance (Rs) increases approximately linearly with testing time, and the rate of change of Rs increased exponentially corresponding to the loading level. In the RBCC test, it was also found that cell's shunt resistance (Rsh) decayed exponentially with time, and then it approaches to constant value. Furthermore, threshold level for occurrence of breakdown breakage of the cells was found to be about 70 to 80 watt. The methods presented here demonstrated the possibility of applying the reverse bias test for degradation of c-Si single-cell PV modules.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Jin, K. Ikeda, and T. Doi "Reverse bias test of c-Si single-cell PV modules", Proc. SPIE 8112, Reliability of Photovoltaic Cells, Modules, Components, and Systems IV, 81120Y (13 September 2011);

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