7 September 2011 A high performance solution processable organic semiconductor material for OTFT devices
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Abstract
We demonstrate the performance of thin film transistor devices based on a solution processable organic semiconductor with a field effect mobility of up to 2.5cm2V-1s-1. The performance of the material is demonstrated in a top gate, bottom contact device architecture operational in air without the requirement for device encapsulation. From a device performance aspect, we also highlight the influence that contact resistance has on the mobility.
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Christopher J. Newsome, Julian C. Carter, Richard J. Wilson, Jeremy H. Burroughes, "A high performance solution processable organic semiconductor material for OTFT devices", Proc. SPIE 8117, Organic Field-Effect Transistors X, 811710 (7 September 2011); doi: 10.1117/12.896166; https://doi.org/10.1117/12.896166
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