Paper
16 September 2011 Organic field-effect transistors: a combined study on short-channel effects and the influence of substrate pre-treatment on ambient stability
A. Klug, A. Meingast, G. Wurzinger, A. Blümel, K. Schmoltner, U. Scherf, E. J. W. List
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Abstract
For high-performance low-cost applications based on organic field-effect transistors (OFETs) and corresponding sensors essential properties of the applied semiconducting materials include solution-processability, high field-effect mobility, compatibility with adjacent layers and stability with respect to ambient conditions. In this combined study regioregular poly(3-hexylthiophene)- and pentacene-based bottom-gate bottom-contact OFETs with various channel lengths are thoroughly investigated with respect to short-channel effects and the implications of dielectric surface modification with hexamethyldisilazane (HMDS) on device performance. In addition, the influences of oxygen, moisture and HMDStreatment on the ambient stability of the devices are evaluated in detail. While OFETs without surface modification exhibited the expected degradation behavior upon air exposure mainly due to oxygen/moisture-induced doping or charge-carrier trapping, the stability of the investigated semiconductors was found to be distinctly increased when the substrate surface was hydrophobized. The presented results thoroughly summarize important issues which have to be considered when selecting semiconducting materials for high-performance OFETs and OFET-based sensors.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Klug, A. Meingast, G. Wurzinger, A. Blümel, K. Schmoltner, U. Scherf, and E. J. W. List "Organic field-effect transistors: a combined study on short-channel effects and the influence of substrate pre-treatment on ambient stability", Proc. SPIE 8118, Organic Semiconductors in Sensors and Bioelectronics IV, 811809 (16 September 2011); https://doi.org/10.1117/12.893835
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Cited by 5 scholarly publications.
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KEYWORDS
Field effect transistors

Silica

Semiconductors

Head-mounted displays

Resistance

Oxygen

Dielectrics

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