Maximum fixing efficiency of thermal fixing by optimal switching in LiNbO3:Fe crystal

Peipei Hou; Ya'nan Zhi; Jianfeng Sun; Yu Zhou; Yongjian Zhu; Liren Liu

doi:10.1117/12.892650

7 September 2011 Maximum fixing efficiency of thermal fixing by optimal switching in LiNbO₃:Fe crystal

Peipei Hou, Ya'nan Zhi, Jianfeng Sun, Yu Zhou, Yongjian Zhu, Liren Liu

Proceedings Volume 8120, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V; 812010 (2011) https://doi.org/10.1117/12.892650
Event: SPIE Photonic Devices + Applications, 2011, San Diego, California, United States

Abstract

Maximum fixing efficiency of thermal fixing in LiNbO₃:Fe crystal is investigated. Based on Kukhtarev's band transport model and Kogenlik's theory, the mechanisms leading a high diffraction fixed hologram in LiNbO₃:Fe crystal is analyzed. To obtain a volume grating with the maximum fixed diffraction efficiency, the optimal switching from recording step to thermal fixing is taken into consideration. With the same oxidation state and dopant concentration, the developed efficiency for low light intensity depended on the recording wavelength. Holographic gratings are recorded using three typical recording wavelengths including 488nm, 514nm, and 633nm respectively. The fixed holograms are developed by original recording setup. Diffraction efficiencies of recording and thermal fixing are measured by two-wave coupling technique. Both experimental results and theoretical simulation are presented. Through the theoretical and experimental results analyzed and compared, the blue beam was the optimal recording wavelength for maximum fixing efficiency of thermal fixing in LiNbO₃:Fe. This work can obtain high persistent diffraction of the nonvolatile holographic storage in LiNbO₃:Fe crystals.

Citation Download Citation

Peipei Hou, Ya'nan Zhi, Jianfeng Sun, Yu Zhou, Yongjian Zhu, and Liren Liu "Maximum fixing efficiency of thermal fixing by optimal switching in LiNbO₃:Fe crystal", Proc. SPIE 8120, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V, 812010 (7 September 2011); https://doi.org/10.1117/12.892650

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