Thermal effects on spectral modulation properties of high-power light-emitting diodes

Zenonas Vaitonis; Pranciskus Vitta; Vytautas Jakstas; Arturas Zukauskas

doi:10.1117/12.893027

7 September 2011 Thermal effects on spectral modulation properties of high-power light-emitting diodes

Zenonas Vaitonis, Pranciskus Vitta, Vytautas Jakstas, Arturas Zukauskas

Proceedings Volume 8120, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V; 812016 (2011) https://doi.org/10.1117/12.893027
Event: SPIE Photonic Devices + Applications, 2011, San Diego, California, United States

Abstract

We report on the effect of transient selfheating on the spectral modulation of electroluminescence (EL) in high-power light-emitting diodes (LEDs). In AlGaInP LEDs, which emit due to the band-to-band recombination of free carriers, the oscillation of junction temperature was found to result in that the modulation depth has a drop around the peak photon energy, an increased magnitude at lower energies, and a linear increase with photon energy at higher energies. These properties of the EL modulation spectrum can be explained by a model that takes into account the thermal modulation of band gap energy and carrier distribution function. In InGaN LEDs, almost no thermal effect on EL modulation was found around the peak photon energy and at lower energies, whereas at higher energies, the modulation depth also increases with photon energy. Such a spectrum of EL modulation depth can be understood in terms of localized carrier effect at peak photon energy and lower energies and of free carrier heating at higher energies. The frequency dependence of modulation depth at particular photon energies was shown to sensitively replicate the thermal response function of the LEDs.

Citation Download Citation

Zenonas Vaitonis, Pranciskus Vitta, Vytautas Jakstas, and Arturas Zukauskas "Thermal effects on spectral modulation properties of high-power light-emitting diodes", Proc. SPIE 8120, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V, 812016 (7 September 2011); https://doi.org/10.1117/12.893027

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KEYWORDS

Modulation

Light emitting diodes

Electroluminescence

Indium gallium nitride

Aluminium gallium indium phosphide

Thermal effects

Phase shifts

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