23 September 2011 Highly efficient InGaN/GaN blue LEDs on large diameter Si (111) substrates comparable to those on sapphire
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Abstract
Highly efficient InGaN/GaN LEDs grown on 4- and 8-inch silicon substrates comparable to those on sapphire substrates have been successfully demonstrated. High crystalline quality of n-GaN templates on Si were obtained by optimizing combination of stress compensation layers and dislocation reduction layers. The full-width at half-maximum (FWHM) values of GaN (0002) and (10-12) ω-rocking curves of n-GaN templates on 4-inch Si substrates were 205 and 290 arcsec and those on 8-inch Si substrate were 220 and 320 arcsec, respectively. The dislocation densities were measured about 2~3×108/cm2 by atomic force microscopy (AFM) after in-situ SiH4 and NH3 treatment. Under the unencapsulated measurement condition of vertical InGaN/GaN LED grown on 4-inch Si substrate, the overall output power of the 1.4×1.4 mm2 chips representing a median performance exceeded 504 mW with the forward voltage of 3.2 V at the driving current of 350 mA. These are the best values among the reported values of blue LEDs grown on Si substrates. The measured internal quantum efficiency was 90 % at injection current of 350 mA. The efficiency droops of vertical LED chips on Si between the maximum efficiency and the efficiency measured at 1A (56.69 A/cm2) input current was 5%.
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Jun-Youn Kim, Jun-Youn Kim, Yongjo Tak, Yongjo Tak, Hyun-Gi Hong, Hyun-Gi Hong, Suhee Chae, Suhee Chae, Jae Won Lee, Jae Won Lee, Hyoji Choi, Hyoji Choi, Jae Kyun Kim, Jae Kyun Kim, Bokki Min, Bokki Min, Youngsoo Park, Youngsoo Park, U-In Chung, U-In Chung, Minho Kim, Minho Kim, Seongsuk Lee, Seongsuk Lee, Namgoo Cha, Namgoo Cha, Yoonhee Shin, Yoonhee Shin, Cheolsoo Sone, Cheolsoo Sone, Jong-Ryeol Kim, Jong-Ryeol Kim, Jong-In Shim, Jong-In Shim, } "Highly efficient InGaN/GaN blue LEDs on large diameter Si (111) substrates comparable to those on sapphire", Proc. SPIE 8123, Eleventh International Conference on Solid State Lighting, 81230A (23 September 2011); doi: 10.1117/12.892441; https://doi.org/10.1117/12.892441
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