23 September 2011 High-quality vertical light emitting diodes fabrication by mechanical lift-off technique
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We report the fabrication of mechanical lift-off high quality thin GaN with Hexagonal Inversed Pyramid (HIP) structures for vertical light emitting diodes (V-LEDs). The HIP structures were formed at the GaN/sapphire substrate interface under high temperature during KOH wet etching process. The average threading dislocation density (TDD) was estimated by transmission electron microscopy (TEM) and found the reduction from 2×109 to 1×108 cm-2. Raman spectroscopy analysis revealed that the compressive stress of GaN epilayer was effectively relieved in the thin-GaN LED with HIP structures. Finally, the mechanical lift-off process is claimed to be successful by using the HIP structures as a sacrificial layer during wafer bonding process.
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Po-Min Tu, Po-Min Tu, Shih-Chieh Hsu, Shih-Chieh Hsu, Chun-Yen Chang, Chun-Yen Chang, } "High-quality vertical light emitting diodes fabrication by mechanical lift-off technique", Proc. SPIE 8123, Eleventh International Conference on Solid State Lighting, 81230R (23 September 2011); doi: 10.1117/12.893237; https://doi.org/10.1117/12.893237


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