Paper
23 September 2011 Intense blue-white luminescence from amorphous silicon oxycarbide (a-SiCxOy) thin films
Vasileios Nikas, Spyros Gallis, Himani Suhag, Mengbing Huang, Alain E. Kaloyeros
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Abstract
We report on blue-white luminescence from amorphous silicon oxycarbide a-SiCxOy≤1.68 (0.25<x<0.36) thin films, synthesized by thermal chemical vapor deposition (TCVD) process. The luminescence from SiCxOy was found to exhibit a broad band in the blue-violet to near infrared range (370 - 750 nm), visible to the naked eye in a bright room. The effects of carbon concentration (8.4 at.% < C < 13.6 at.%) in the material and post-deposition annealing treatments (Ar and forming gas 5% of H2 ambient up to 1100°C) on the observed luminescence were studied. The emission intensity slightly decreased with increasing carbon content but was appreciably enhanced in the samples following post-deposition annealing treatment in forming gas 5% of H2 ambient.
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Vasileios Nikas, Spyros Gallis, Himani Suhag, Mengbing Huang, and Alain E. Kaloyeros "Intense blue-white luminescence from amorphous silicon oxycarbide (a-SiCxOy) thin films", Proc. SPIE 8123, Eleventh International Conference on Solid State Lighting, 812316 (23 September 2011); https://doi.org/10.1117/12.891342
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KEYWORDS
Luminescence

Silicon

Annealing

Thin films

Absorption

Visible radiation

Argon

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