24 September 2011 Atomic distribution of transition metals in III-nitrides
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Abstract
Understanding atomic distributions on the order of nanometers is becoming ever more essential to solid-state electronic device design. The local composition of any singular constituent can have a great effect on a host of materials properties. Atom probe tomography is currently the only characterization technique that can provide direct physical detection of ionic species of atoms. In this work, MOCVD grown GaMnN thin films are characterized utilizing the state of the art local electrode atom probe (LEAPTM) to determine the atomic ordering of Mn in an effort to help understand room-temperature ferromagnetic exchange mechanisms in wide-bandgap dilute magnetic semiconductors. The results support prior magnetometry data that suggest paramagnetism results primarily from isolated Mn atoms. A predisposition for the formation of dimers, trimers or clusters does not exist in the samples grown. The ultimate goal in determining the physical arrangements of atoms and how they related to exchange mechanisms is to understand the structure-propertygrowth condition relationships for the tailoring of specific MOCVD processes that will lead to the ability to selectively control spintronic device functionalities.
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Robert W. Nicholas, Robert W. Nicholas, Matthew H. Kane, Matthew H. Kane, } "Atomic distribution of transition metals in III-nitrides", Proc. SPIE 8123, Eleventh International Conference on Solid State Lighting, 81231L (24 September 2011); doi: 10.1117/12.893578; https://doi.org/10.1117/12.893578
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