Paper
14 September 2011 Profile measurement of thin films by linear wavenumber-scanning interferometry
Osami Sasaki, Satoshi Hirakubo, Samuel Choi, Takamasa Suzuki
Author Affiliations +
Abstract
Conventional methods to measure the positions of the front and rear surfaces of thin films with multiplewavelength interferometers are reviewed to make it clear how the method proposed here is novel and simple. Characteristics of the linear wavenumber-scanning interferometry used in the proposed method are analyzed in detail to make the measurement accuracy clearly. The positions of the front and rear surfaces of a silicon dioxide film with 4μm thickness is measured by utilizing the phases of the sinusoidal waves forms corresponding to each of the optical path differences contained in the interference signal. The experiments and the theoretical analysis show that the measurement error is about 15 nm.
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Osami Sasaki, Satoshi Hirakubo, Samuel Choi, and Takamasa Suzuki "Profile measurement of thin films by linear wavenumber-scanning interferometry", Proc. SPIE 8133, Dimensional Optical Metrology and Inspection for Practical Applications, 81330K (14 September 2011); https://doi.org/10.1117/12.894454
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KEYWORDS
Thin films

Interferometers

Fourier transforms

Signal detection

Interferometry

Light sources

Mirrors

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