13 September 2011 Scaling of laser produced plasma UTA emission down to 3 nm for next generation lithography and short wavelength imaging
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Abstract
An engineering prototype high average power 13.5-nm source has been shipped to semiconductor facilities to permit the commencement of high volume production at a 100 W power level in 2011. In this source, UTA (unresolved transition array) emission of highly ionized Sn is optimized for high conversion efficiency and full recovery of the injected fuel is realized through ion deflection in a magnetic field. By use of a low-density target, satellite emission is suppressed and full ionization attained with short pulse CO2 laser irradiation. The UTA is scalable to shorter wavelengths, and Gd is shown to have similar conversion efficiency to Sn (13.5 nm) at a higher plasma temperature, with a narrow spectrum centered at 6.7 nm, where a 70% reflectivity mirror is anticipated. Optimization of short pulse CO2 laser irradiation is studied, and further extension of the same method is discussed, to realize 100 W average power down to a wavelength of 3 nm.
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Bowen Li, Akira Endo, Takamitsu Otsuka, Colm O'Gorman, Thomas Cummins, Tony Donnelly, Deirdre Kilbane, Weihua Jiang, Takeshi Higashiguchi, Noboru Yugami, Padraig Dunne, Gerry O'Sullivan, "Scaling of laser produced plasma UTA emission down to 3 nm for next generation lithography and short wavelength imaging", Proc. SPIE 8139, Advances in X-Ray/EUV Optics and Components VI, 81390P (13 September 2011); doi: 10.1117/12.892513; https://doi.org/10.1117/12.892513
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